Methods for protecting silicon or silicon carbide electrode...

Details Methods for protecting silicon or silicon carbide electrode... Methods for protecting silicon or silicon carbide electrode...

2007-06-05

2007-06-05

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S711000, C438S714000, C438S694000, C438S695000, C438S706000, C438S719000, C427S534000, C427S536000, C427S490000

Reexamination Certificate

active

10975946

ABSTRACT:
Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.

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