Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-01-16
2007-01-16
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S287000, C438S514000, C438S530000, C257SE21193, C257SE21268, C257SE21274
Reexamination Certificate
active
10096732
ABSTRACT:
A method is provided for forming a thin film layer on a substrate. The method includes the steps of doping a thin surface layer on the substrate with low energy ions of a dopant material, and heating the thin surface layer sufficiently to produce a reaction between the dopant material and the surface layer. The heating step is performed simultaneously with at least part of the doping step. The doping step may utilize plasma doping of the thin surface layer. In one embodiment, the doping step includes plasma doping of a silicon oxide layer with nitrogen ions. The heating step may utilize thermal conduction or heating with radiation, such as heating with optical energy. The process may be used for forming dielectric layers having a thickness of 50 angstroms or less.
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Ghyka Alexander
Varian Semiconductor Equipment Associates Inc.
Varian Semiconductor Equipment Associates, Inc.
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