Methods for forming silicon dioxide layers on substrates...

Details Methods for forming silicon dioxide layers on substrates... Methods for forming silicon dioxide layers on substrates...

2006-01-31

2006-01-31

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

Reexamination Certificate

active

06992019

ABSTRACT:
Improved methods are disclosed for catalyst-assisted atomic layer deposition (ALD) to form a silicon dioxide layer having superior properties on a semiconductor substrate by using a first reactant component consisting of a silicon compound having at least two silicon atoms, or using a tertiary aliphatic amine as the catalyst component, or both in combination, together with related purging methods and sequencing.

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