Methods for forming silicide conductors using substrate masking

Details Methods for forming silicide conductors using substrate masking Methods for forming silicide conductors using substrate masking

2011-03-01

2011-03-01

Arora, Ajay K (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S149000, C438S631000, C257SE21190

Reexamination Certificate

active

07897500

ABSTRACT:
A plurality of spaced-apart conductor structures is formed on a semiconductor substrate, each of the conductor structures including a conductive layer. Insulating spacers are formed on sidewalls of the conductor structures. An interlayer-insulating film that fills gaps between adjacent ones of the insulating spacers is formed. Portions of the interlayer-insulating layer are removed to expose upper surfaces of the conductive layers. Respective epilayers are grown on the respective exposed upper surfaces of the conductive layers and respective metal silicide layers are formed from the respective epilayers.

REFERENCES:
patent: 6660573 (2003-12-01), Han
patent: 2004/0129981 (2004-07-01), Kim et al.
patent: 2006/0084247 (2006-04-01), Liu
patent: 2007-073887 (2007-03-01), None
patent: 1020040006421 (2004-01-01), None
patent: 1020040028384 (2004-04-01), None

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