Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-07-30
2000-01-11
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438681, 438685, 427576, H01L 21205
Patent
active
06013576&
ABSTRACT:
A metal nitride layer is formed on a substrate by exposing the substrate to a mixture including a nitrogen-containing organometallic gas and a hydrogen plasma to form a metal nitride layer on the substrate. The nitrogen-containing organometallic gas may comprise penta dimethyl amido tantalum (Ta(N(CH.sub.3).sub.2).sub.5, and the metal nitride layer may be formed by exposing comprises the step of exposing the substrate to a mixture including penta dimethyl amido tantalum gas (Ta(N(CH.sub.3).sub.2).sub.5 and a hydrogen plasma at a temperature greater than 300.degree. C., more preferably, at a temperature of 300.degree. C. to 750.degree. C. and a pressure of 0.5 torr to 1.5 torr. The penta dimethyl amido tantalum gas (Ta(N(CH.sub.3).sub.2).sub.5 is preferably provided to a chamber in which the substrate is placed at a mass flow rate of 50 sccm to 150 sccm, and the hydrogen plasma referably provided to the chamber at a mass flow rate of 30 sccm to 100 sccm. The hydrogen plasma may be produced external to the chamber in an atmosphere comprising hydrogen and an inert gas such as argon. A tantalum nitride (Ta.sub.3 N.sub.5 layer having a resistivity less than 1.times.10.sup.4 .mu..OMEGA.-cm may thereby be formed.
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Lee Sang-in
Oh Jae-eung
Park Chang-soo
Eaton Kurt
Jr. Carl Whitehead
Samsung Electronics Co,. Ltd.
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