Methods for forming a transistor

Details Methods for forming a transistor Methods for forming a transistor

2005-05-06

2008-08-19

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000, C257SE21431

Reexamination Certificate

active

07413957

ABSTRACT:
Methods are provided for depositing materials in forming semiconductor devices on a substrate, such as metal oxide transistors. In one embodiment, the invention generally provides a method of processing a substrate including forming a gate dielectric on a substrate having a first conductivity, forming a gate electrode on the gate dielectric, forming a first pair of sidewall spacers along laterally opposite sidewalls of the gate electrode, etching a pair of source/drain region definitions on opposite sides of the electrode, depositing a silicon-germanium material selectively in the source/drain region definitions, and implanting a dopant in the deposited silicon-germanium material to form a source/drain region having a second conductivity.

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