Methods for fabricating transistors having trench gates

Details Methods for fabricating transistors having trench gates Methods for fabricating transistors having trench gates

2005-04-07

2008-12-09

Elms, Richard (Department: 2824)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21429, C257SE21655, C438S734000, C438S739000, C438S743000, C438S756000

Reexamination Certificate

active

07462544

ABSTRACT:
A transistor including an active region and methods thereof. The active region may include corners with at least one of a rectangular, curved or rounded shape. The methods may include isotropically etching at least a portion of the active region such that the portion includes a desired shape.

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Korean Office Action dated Feb. 28, 2006.

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