Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-20
2009-08-25
Tran, Minh-Loan T (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S607000, C257SE21433
Reexamination Certificate
active
07579249
ABSTRACT:
Provided are a DRAM semiconductor device and a method for fabricating the DRAM semiconductor device. The method provides forming a silicon epitaxial layer on a source/drain region of a cell region and a peripheral circuit region using selective epitaxial growth (SEG), thereby forming a raised active region. In addition, in the DRAM semiconductor device, a metal silicide layer and a metal pad are formed on the silicon epitaxial layer in the source/drain region of the cell region. By doing this, the DRAM device is capable of forming a source/drain region as a shallow junction region, reducing the occurrence of leakage current and lowering the contact resistance with the source/drain region.
REFERENCES:
patent: 4791611 (1988-12-01), Eldin et al.
patent: 4945070 (1990-07-01), Hsu
patent: 5276346 (1994-01-01), Iwai et al.
patent: 5397909 (1995-03-01), Moslehi
patent: 5486712 (1996-01-01), Arima
patent: 5571733 (1996-11-01), Wu et al.
patent: 5571744 (1996-11-01), Demirlioĝlu et al.
patent: 5760451 (1998-06-01), Yu
patent: 5959324 (1999-09-01), Kohyama
patent: 5973371 (1999-10-01), Kasai
patent: 6040613 (2000-03-01), McTeer et al.
patent: 6107154 (2000-08-01), Lin
patent: 6114241 (2000-09-01), Choi et al.
patent: 6146955 (2000-11-01), Lee
patent: 6235575 (2001-05-01), Kasai et al.
patent: 6249054 (2001-06-01), Tanigawa
patent: 6271099 (2001-08-01), Lou
patent: 6312994 (2001-11-01), Nakamura
patent: 6326281 (2001-12-01), Violette et al.
patent: 6348390 (2002-02-01), Wu
patent: 6399450 (2002-06-01), Yu
patent: 6455368 (2002-09-01), Aoki
patent: 6465851 (2002-10-01), Nakahata et al.
patent: 6472265 (2002-10-01), Hsieh
patent: 6548394 (2003-04-01), Peng et al.
patent: 6559494 (2003-05-01), Taniguchi
patent: 6576509 (2003-06-01), Toyokawa et al.
patent: 6660600 (2003-12-01), Ahmad et al.
patent: 6683355 (2004-01-01), Gonzalez et al.
patent: 11-330417 (1999-11-01), None
patent: 2000-0044936 (2000-07-01), None
Notice to Submit Response, with English language translation, KR Application No. 2002-0045893, May 31, 2004.
Choi Si-young
Kim Chul-sung
Lee Byeong-chan
Lee Deok-hyung
Yoo Jong-ryeol
Kuo W. Wendy
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Tran Minh-Loan T
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