Methods for fabricating a semiconductor device

Details Methods for fabricating a semiconductor device Methods for fabricating a semiconductor device

2007-03-20

2009-12-29

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S276000, C438S400000, C438S405000, C438S423000, C438S433000, C257SE21302

Reexamination Certificate

active

07638396

ABSTRACT:
A method for fabricating a semiconductor device comprises providing a silicon-containing substrate with first, second, and third regions. First, second, and third gate stacks respectively overlie a portion of the silicon-containing substrate in the first, second, and third regions. A spacer is formed on opposing sidewalls of each of the first, second, and third gate stacks, the spacer overlying a portion of the silicon-containing substrate in the first, second, and third regions, respectively. A source/drain region is formed in a portion of the silicon-containing substrate in the first, second, and third regions, with the source/drain region adjacent to the first, second, and third gate stacks, respectively. The first, second, and third gate stacks have first, second, and third gate dielectric layers of various thicknesses and at least one thereof with a relatively thin thickness is treated by NH3-plasma, having a nitrogen-concentration of about 1013˜1021atoms/cm2therein.

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