Doped single crystal silicon silicided eFuse

Details Doped single crystal silicon silicided eFuse Doped single crystal silicon silicided eFuse

2008-03-06

2009-08-11

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S149000, C438S201000

Reexamination Certificate

active

07572724

ABSTRACT:
An eFuse begins with a single crystal silicon-on-insulator (SOI) structure that has a single crystal silicon layer on a first insulator layer. The single crystal silicon layer is patterned into a strip. Before or after the patterning, the single crystal silicon layer is doped with one or more impurities. At least an upper portion of the single crystal silicon layer is then silicided to form a silicided strip. In one embodiment the entire single crystal silicon strip is silicided to create a silicide strip. Second insulator(s) is/are formed on the silicide strip, so as to isolate the silicided strip from surrounding structures. Before or after forming the second insulators, the method forms electrical contacts through the second insulators to ends of the silicided strip. By utilizing a single crystal silicon strip, any form of semiconductor, such as a diode, conductor, insulator, transistor, etc. can form the underlying portion of the fuse structure. The overlying silicide material allows the fuse to act as a conductor in its unprogrammed state. However, contrary to metal or polysilicon based eFuses which only comprise an insulator in the programmed state, when the inventive eFuse is programmed (and the silicide is moved or broken) the underlying semiconductor structure operates as an active semiconductor device.

REFERENCES:
patent: 4517583 (1985-05-01), Uchida
patent: 5444287 (1995-08-01), Bezama et al.
patent: 5882998 (1999-03-01), Sur, Jr. et al.
patent: 6088256 (2000-07-01), Worley et al.
patent: 6307213 (2001-10-01), Huang et al.
patent: 6368902 (2002-04-01), Kothandaraman et al.
patent: 6432760 (2002-08-01), Kothandaraman et al.
patent: 6633055 (2003-10-01), Bertin et al.
patent: 6653710 (2003-11-01), Adkisson et al.
patent: 6661330 (2003-12-01), Young
patent: 6667537 (2003-12-01), Koike et al.
patent: 6774439 (2004-08-01), Fukuzumi et al.
patent: 7153712 (2006-12-01), Sidhu et al.
patent: 7176551 (2007-02-01), Cheng et al.
patent: 7382036 (2008-06-01), Nowak et al.
patent: 7479689 (2009-01-01), Kim et al.
patent: 2002/0033519 (2002-03-01), Babcock et al.
patent: 2003/0134456 (2003-07-01), Wang et al.
patent: 2003/0234435 (2003-12-01), Zimmerman et al.
patent: 2004/0036090 (2004-02-01), Wang et al.
patent: 2004/0038458 (2004-02-01), Marr
patent: 2004/0181724 (2004-09-01), McBride
patent: 2007/0026579 (2007-02-01), Nowak et al.
patent: 2008/0153278 (2008-06-01), Nowak et al.
patent: 2008/0169529 (2008-07-01), Kim et al.
patent: 2008/0179706 (2008-07-01), Kim et al.
patent: 61268041 (1986-11-01), None
patent: 8264654 (1996-10-01), None
patent: 11087522 (1999-03-01), None
patent: 2001057139 (2001-02-01), None
patent: 2004134091 (2004-04-01), None
patent: WO 0188981 (2001-11-01), None

Affiliated with

Also associated with

Rating

Doped single crystal silicon silicided eFuse does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Doped single crystal silicon silicided eFuse, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doped single crystal silicon silicided eFuse will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4094287