Methods for detecting the endpoint of a photoresist...

Details Methods for detecting the endpoint of a photoresist... Methods for detecting the endpoint of a photoresist...

2006-07-18

2006-07-18

Lund, Jeffrie R. (Department: 1763)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S059000, C438S008000, C438S016000, C438S725000

Reexamination Certificate

active

07077971

ABSTRACT:
Methods for detecting the endpoint of a photoresist stripping process provide O for reaction with the photoresist for a wafer to be stripped of photoresist. NO is also supplied for reaction with O not reacted with the photoresist. After substantially all the photoresist is stripped from the wafer, the rate of a reaction of O and NO to form NO2increases, which increases the intensity of emitted light. An operation of detecting this increase in light intensity signals the endpoint of the photoresist stripping process.

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