Methods for critical dimension control during plasma etching

Details Methods for critical dimension control during plasma etching Methods for critical dimension control during plasma etching

2003-03-27

2009-11-24

Ahmed, Shamim (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S074000, C216S079000, C438S706000, C438S710000

Reexamination Certificate

active

07622051

ABSTRACT:
A method of etching a substrate in a plasma processing chamber is disclosed. The method includes introducing the substrate having thereon an underlying layer, an anti-reflective layer above the underlying layer, and a photo-resist layer above the anti-reflective layer into the chamber. The method also includes flowing a gas mixture into the chamber, the gas mixture includes a flow of a hydrofluorocarbon gas, a flow of fluorocarbon gas, a flow of a halogen-containing gas other than the hydrofluorocarbon gas, and a flow of oxygen gas. The method further includes striking a plasma from the gas mixture. The method additionally includes etching at least through the anti-reflective layer with the plasma.

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