Methods and systems for a stress-free cleaning a surface of...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S692000, C438S694000, C438S758000, C438S508000, C134S001300, C134S002000

Reexamination Certificate

active

07129167

ABSTRACT:
A method of cleaning a substrate includes receiving a substrate and applying a stress-free cleaning process to the top surface of the substrate. The substrate includes a top surface that is substantially free of device dependent planarity nonuniformities and device independent planarity nonuniformities. The top surface also includes a first material and a device structure formed in the first material, the device structure being formed from a second material. The device structure has a device surface exposed. The device surface has a first surface roughness. A system for stress-free cleaning a substrate is also described.

REFERENCES:
patent: 5098516 (1992-03-01), Norman et al.
patent: 2003/0032292 (2003-02-01), Noguchi
patent: 2004/0023606 (2004-02-01), Wang et al.
patent: 2004/0188713 (2004-09-01), Rantala et al.
patent: 2004/0206454 (2004-10-01), Chopra et al.
patent: 2005/0026442 (2005-02-01), Li et al.
patent: 2005/0032381 (2005-02-01), Moon et al.
Nagraj S. Kulkarni, Robert T. DeHoff, “Application of Volatility Diagrams for Low Temperature, Dry Etching, and Planarization of Copper”,Journal of the Electromechanical Society, 149, 2002, pp. G620-G632.
Y. Ohshita, N. Howi, “Lower Temperature Plasma Etching of Cu Using IR Light Irradiation”,Thin Solid Films, 262, 1995.
Lynn R. Allen, John M. Grant, “Tungsten Plug Etchback And Substrate Damage Measured By Atomic Force Microscopy”,J. Vac. Sci Technol.B 13(3), May/Jun. 1995, pp. 918-922.
Seongju Park, T.N. Rhodin, L.C. Rathbun, “Halide Formation And Etching Of Cu Thin Films with CI2and Br2”,J. Vac. Sci. Technol.A (2), Mar./Apr. 1986, pp. 168-172.
J. Farkas, K.-M. Chi, M.J. Hampden-Smith, T.T. Kodas, “Low Temperature Copper Etching Via Reactions With CI2and PEt3Under Ultrahigh Vacuum Conditions”,J. Appl. Phys.73 (3), Feb. 1, 1993, pp. 1455-1460.
William F. Marx, Yunju Ra, Richard Yang, Ching-Hwa Chen, “Plasma And Processing Effects of Electrode Spacing For Tungsten Etchback Using A Bipolar Electrostatic Wafer Clamp”,J. Vac. Sci. Technol. A12(6), Nov./Dec. 1994, pp. 3087-3090.
Lynn R. Allen, “Tungsten Plug Etchback In A TCP Etcher”, pp. 255-263.
N. Hosoi, Y Ohshita, “Plasma Etching Of Copper Films Using IR Light Irradiation”,Mat. Res. Soc. Symp. Proc.vol. 337, 1994, pp. 201-205.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods and systems for a stress-free cleaning a surface of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods and systems for a stress-free cleaning a surface of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and systems for a stress-free cleaning a surface of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3678472

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.