Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-15
2008-10-28
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S785000, C257SE21396
Reexamination Certificate
active
07442604
ABSTRACT:
Provided are methods of manufacturing dielectric films including forming a first dielectric film on a wafer using atomic layer deposition (ALD) in a first batch type apparatus, forming a second dielectric film on the first dielectric film using atomic layer deposition in a second batch type apparatus, wherein the second dielectric film has a higher crystallization temperature than the first dielectric film and forming a third dielectric film on the second dielectric film using atomic layer deposition in a third batch type apparatus. Methods of manufacturing metal-insulator-metal (MIM) capacitors using the methods of forming the dielectric films and batch type atomic layer deposition apparatus for forming the dielectric films are also provided.
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Choi Jae-Hyoung
Chung Jung-hee
Lee Jong-cheol
Oh Se-hoon
Kebede Brook
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
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