Methods and arrangements for introducing nitrogen into a tunnel

Details Methods and arrangements for introducing nitrogen into a tunnel Methods and arrangements for introducing nitrogen into a tunnel

1998-08-28

1999-10-26

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438262, 438264, 438528, 438593, H01L 21336

Patent

active

059727519

ABSTRACT:
Methods and arrangements are provided for introducing nitrogen into a tunnel oxide layer within a stacked gate structure of a non-volatile memory cell. The nitrogen is advantageously introduced into only a select portion of the tunnel oxide, preferably nearer the source region of the memory cell. This prevents the unwanted or residual nitrogen from detrimentally affecting other devices within the semiconductor integrated circuit.

REFERENCES:
patent: 4683637 (1987-08-01), Varker et al.
patent: 5610084 (1997-03-01), Solo de Zaldivar
patent: 5759897 (1998-06-01), Kadosh et al.
patent: 5837585 (1998-11-01), Wu et al.
patent: 5861347 (1999-01-01), Maiti et al.

Affiliated with

Also associated with

Rating

Methods and arrangements for introducing nitrogen into a tunnel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods and arrangements for introducing nitrogen into a tunnel , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and arrangements for introducing nitrogen into a tunnel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-763434