Methods and apparatus for the optimization of etch...

Details Methods and apparatus for the optimization of etch... Methods and apparatus for the optimization of etch...

2008-01-08

2008-01-08

Norton, Nadine G. (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S051000, C216S067000, C216S072000, C216S079000, C216S080000, C216S104000, C438S710000, C438S723000, C438S724000, C438S743000, C438S744000

Reexamination Certificate

active

10883282

ABSTRACT:
In a plasma processing system, including a plasma processing chamber, a method of optimizing the etch resistance of a substrate material is described. The method includes flowing pre-coat gas mixture into the plasma processing chamber, wherein the pre-coat gas mixture has an affinity for a etchant gas flow mixture; striking a first plasma from the pre-coat gas mixture; and introducing a substrate comprising the substrate material. The method also includes flowing the etchant gas mixture into the plasma processing chamber; striking a second plasma from the etchant gas mixture; and etching the substrate with the second plasma. Wherein the first plasma creates a pre-coat residual on a set of exposed surfaces in the plasma processing chamber, and the etch resistance of the substrate material is maintained.

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