Methods and apparatus for polishing control

Data processing: generic control systems or specific application – Generic control system – apparatus or process – Optimization or adaptive control

Reexamination Certificate

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C700S121000

Reexamination Certificate

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11370493

ABSTRACT:
A CMP station can be closed loop controlled by using data obtained by an inline metrology station from a first polished wafer to affect the processing of subsequent polished wafers. The first wafer is polished and measured by the inline metrology station. The metrology station measures at various points the array dielectric thickness, field dielectric thickness, barrier residue thickness and metal residue thickness. The data is then inputted into an algorithm and polishing parameter outputs are calculated. The outputs are sent to the CMP station and used to supplement or replace the previous polishing parameters. Subsequent wafers are polished on the CMP station using the revised polishing parameters.

REFERENCES:
patent: 5081796 (1992-01-01), Schultz
patent: 5486129 (1996-01-01), Sandhu et al.
patent: 5658183 (1997-08-01), Sandhu et al.
patent: 5722875 (1998-03-01), Iwashita et al.
patent: 5730642 (1998-03-01), Sandhu et al.
patent: 5741070 (1998-04-01), Moslehi
patent: 5773316 (1998-06-01), Kurosaki et al.
patent: 5840614 (1998-11-01), Sim et al.
patent: 5948203 (1999-09-01), Wang
patent: 5985094 (1999-11-01), Mosca
patent: 6132289 (2000-10-01), Labunsky et al.
patent: 6159073 (2000-12-01), Wiswesser et al.
patent: 6186865 (2001-02-01), Thornton et al.
patent: 6247998 (2001-06-01), Wiswesser et al.
patent: 6261152 (2001-07-01), Aiyer
patent: 6413145 (2002-07-01), Pinson, II et al.
patent: 6414499 (2002-07-01), Yano et al.
patent: 6422927 (2002-07-01), Zuniga
patent: 6428673 (2002-08-01), Ritzdorf et al.
patent: 6540591 (2003-04-01), Pasadyn et al.
patent: 6589800 (2003-07-01), Patel et al.
patent: 6626741 (2003-09-01), Wang et al.
patent: 6690473 (2004-02-01), Stanke et al.
patent: 6829054 (2004-12-01), Stanke et al.
patent: 6857947 (2005-02-01), Wang et al.
patent: 7074626 (2006-07-01), Parikh et al.
patent: 2001/0015811 (2001-08-01), Ravid et al.
patent: 2001/0026364 (2001-10-01), Ravid et al.
patent: 2002/0005957 (2002-01-01), Moshe et al.
patent: 3801969 (1989-07-01), None
patent: 0879678 (1998-11-01), None
patent: 0904895 (1999-03-01), None
patent: WO99/25520 (1999-05-01), None
Wijekoon et al., “Minimization of Metal Loss during Chemical Mechanical Planerization of Copper-Oxide and Copper—Low κ Damascene Structures”, Mar. 2002, Santa Clara, CA, 4 pp.
Ravid et al., “Copper CMP Planarity Control Using ITM”, 2000, Rehovoth, Israel, 7 pp.
Pan et al., “Copper CMP and Process Control”, Final Paper submitted to CMP-MIC Conference, Feb. 11-12, 1999, Santa Clara, CA and Cambridge, MA, 7 pp.
Zhang et al., “Automated Process Control of Within-Wafer and Wafter-to-Wafer Uniformity in Oxide CMP”, Mar. 2002, Santa Clara, CA, 6 pp.
International Search Report, International Application No. PCT/US03/37337, Apr. 19, 2004, pp. 1-2.

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