Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-03-08
2011-03-08
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S513000, C438S520000, C438S528000, C118S7230AN, C118S7230ER
Reexamination Certificate
active
07902050
ABSTRACT:
In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.
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Christodoulou Fanos
Liu Patricia M.
Sato Tatsuya
Applied Materials Inc.
Dugan & Dugan PC
Estrada Michelle
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