Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-13
2005-12-13
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S672000, C438S676000, C438S692000, C118S715000, C118S7230AN, C118S7230CB, C118S7230IR, C156S345350, C156S345480
Reexamination Certificate
active
06974771
ABSTRACT:
In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.
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Chen Fusen
Chen Ling
Fu Jianming
Glenn Walter Benjamin
Gopalraja Praburam
Applied Materials Inc.
Brewster William M.
Dugan & Dugan
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