Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Patent
1995-11-02
1998-08-04
Breneman, R. Bruce
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
134 11, 438 9, 438 16, 438905, 20419213, 20429832, 156345MT, H01L 2166
Patent
active
057888698
ABSTRACT:
A method of etching a dielectric layer to form a via to an underlying conductive layer is described. The method includes etching selected portions of the dielectric using a plasma containing an etchant and monitoring electromagnetic energy of plasma emission radiation from the species to determine a ratio of a pair of the species in the plasma that is used to indicate the onset of an etch stop phenomenon. Etching of the dielectric continues and additional dielectrics are processed through the plasma etching step while the ratio of species is less than a predetermined threshold value. The process is stopped and a plasma reactor is cleaned once the ratio of the etchants exceeds the threshold value. The method can be used to form vias between a pair of conductive layers. In a preferred approach to form areas for area or bond pads of an integrated circuit during the step of etching the dielectric, the dielectric is masked by a pattern which provides a plurality of vias dispersed within the pad area to be etched forming a sea of contacts or disposed about the periphery of the pad area to be etched forming a ring of contacts contact.
REFERENCES:
patent: 4289188 (1981-09-01), Mizutani et al.
patent: 4457820 (1984-07-01), Bergeron et al.
patent: 4857136 (1989-08-01), Zajac
patent: 4888199 (1989-12-01), Felts et al.
patent: 5290383 (1994-03-01), Koshimizu
patent: 5320704 (1994-06-01), Horioka et al.
patent: 5348614 (1994-09-01), Jerbic
patent: 5374327 (1994-12-01), Imahashi et al.
patent: 5458732 (1995-10-01), Butler et al.
Guinn, K. et al. J. Vac. Sci. Tech. A "Optical emission diagnostics for contact etching in Applied Materials Centura HDP 5300 etcher" vol. 14, #3, pp. 1137-1141, May 1996.
Harshbarger, W.R. et al. J Electronic Mat. "Optical Detector to monitor plasma etching" vol. 7, #3, pp. 429-440, May 1978.
Abstract of "Optical Emission Diagnostics for Contact Etching on the Applied Materials Centura HDP 5300 Dielectric Etcher," K.V. Guinn, K. Tokashiki, 42nd National Symposium, Oct. 16-20, 1995, p. 171.
Abstract of "The Chemical Challenge of Submicron Oxide Etching," S.C. McNevin, K.V. Guinn, J. Ashley Taylor, 42nd National Symposium, Oct. 16-20, 1995, p. 315.
Bickford Richard A.
Dalton Timothy J.
Dubash Jamshed Hoshang
Garver Marion
Westerheim Ann C.
Alanko Anita
Breneman R. Bruce
Cianciolo Christopher J.
Digital Equipment Corporation
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