Method using TEOS ramp-up during TEOS/ozone CVD for improved...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S763000, C438S790000, C438S778000, C438S958000

Reexamination Certificate

active

07459405

ABSTRACT:
Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

REFERENCES:
patent: 6342421 (2002-01-01), Mitani et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method using TEOS ramp-up during TEOS/ozone CVD for improved... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method using TEOS ramp-up during TEOS/ozone CVD for improved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method using TEOS ramp-up during TEOS/ozone CVD for improved... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4039812

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.