Method using TEOS ramp-up during TEOS/ozone CVD for improved...

Details Method using TEOS ramp-up during TEOS/ozone CVD for improved... Method using TEOS ramp-up during TEOS/ozone CVD for improved...

2006-07-25

2008-12-02

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S763000, C438S790000, C438S778000, C438S958000

Reexamination Certificate

active

07459405

ABSTRACT:
Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

REFERENCES:
patent: 6342421 (2002-01-01), Mitani et al.

Affiliated with

Also associated with

Rating

Method using TEOS ramp-up during TEOS/ozone CVD for improved... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method using TEOS ramp-up during TEOS/ozone CVD for improved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method using TEOS ramp-up during TEOS/ozone CVD for improved... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4039812