Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-04
2008-11-04
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S201000, C257SE27046
Reexamination Certificate
active
07445978
ABSTRACT:
An example process to remove spacers from the gate of a NMOS transistor. A stress creating layer is formed over the NMOS and PMOS transistors and the substrate. In an embodiment, the spacers on gate are removed so that stress layer is closer to the channel of the device. The stress creating layer is preferably a tensile nitride layer. The stress creating layer is preferably a contact etch stop liner layer. In an embodiment, the gates, source and drain region have an silicide layer thereover before the stress creating layer is formed. The embodiment improves the performance of the NMOS transistors.
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Hsia Liang Choo
Koh Hui Peng
Lai Chung Woh
Lee Yong Meng
Lim Khee Yong
Chartered Semiconductor Manufacturing Ltd
Horizon IP Pte Ltd
Nguyen Thanh
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