Method to reduce gas-phase reactions in a PECVD process with...

Details Method to reduce gas-phase reactions in a PECVD process with... Method to reduce gas-phase reactions in a PECVD process with...

2007-11-20

2007-11-20

Meeks, Timothy (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S532000

Reexamination Certificate

active

11483842

ABSTRACT:
A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases to deposit an initiation layer by applying an RF power to the electrode. The organosilicon compound flow rate is then ramped-up to a final flow rate to deposit a first transition layer, upon which one or more porogen compounds is introduced and the flow rate porogen compound is ramped up to a final deposition rate while depositing a second transition layer. A porogen doped silicon oxide layer is then deposited by flowing the final porogen and organosilicon flow rates until the RF power is turned off.

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