Method to improve transmittance of an encapsulating film

Details Method to improve transmittance of an encapsulating film Method to improve transmittance of an encapsulating film

2007-05-08

2007-05-08

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C427S579000

Reexamination Certificate

active

11229015

ABSTRACT:
A method for depositing a carbon-containing material layer onto a substrate includes delivering a mixture of precursors for the carbon-containing material layer into a process chamber, doping the carbon-containing material layer with silicon, and depositing the carbon-containing material layer at low temperature. In one aspect, improved light transmittance of the carbon-containing material layer at all wavelengths of a visible light spectrum is obtained. In addition, a method for depositing an encapsulating layer is provided for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. The encapsulating layer may include one or more barrier layer material layers and one or more amorphous carbon material layers. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.

REFERENCES:
patent: 4863755 (1989-09-01), Hess et al.
patent: 5399387 (1995-03-01), Law et al.
patent: 5438222 (1995-08-01), Yamazaki et al.
patent: 5593741 (1997-01-01), Ikeda et al.
patent: 5733610 (1998-03-01), Okazaki et al.
patent: 6055927 (2000-05-01), Shang et al.
patent: 6337102 (2002-01-01), Forrest et al.
patent: 6506691 (2003-01-01), Cook et al.
patent: 6645884 (2003-11-01), Yang
patent: 6699739 (2004-03-01), Yamazaki et al.
patent: 6710542 (2004-03-01), Chun et al.
patent: 6770562 (2004-08-01), Yamazaki et al.
patent: 6791129 (2004-09-01), Inukai
patent: 6991859 (2006-01-01), Klubek et al.
patent: 7074640 (2006-07-01), Maloney et al.
patent: 2003/0159656 (2003-08-01), Tan et al.
patent: 2004/0113542 (2004-06-01), Hsaio et al.
patent: 2004/0262613 (2004-12-01), Maekawa et al.
patent: 2006/0158101 (2006-07-01), Camilletti et al.
patent: 1 365 389 (2003-11-01), None
patent: 61218135 (1986-09-01), None
patent: 2003197636 (2003-07-01), None
patent: WO 00/15869 (2000-03-01), None
Huang et al., “Low Temperature PECBD SiNxFilms Applied in OLED Packaging”,Materials Science and Engineering B98(2003) 248-254.
Kathleen M. Vaeth, “OLED-Display Technology”,Information Display, Jun. 2003, pp. 12-17.
Tao Peng et al., “Silicon Nitride Thin Films Packaging for Flexible Organic Light Emitting Devices”,International Journal of Modern Physics B, vol. 16, Nos. 6 & 7 (2002) pp. 1052-1056.
P.E. Burrows et al., “Gas Permeation and Lifetime Tests on Polymer-Based Barrier Coatings”SPIE Annual Meeting, Invited Paper, Aug. 30, 2000, pp. 1-9.
Nakayama et al., “Physical Properties of diamondlike carbon films deposited in mixed atmospheres of C2H4—Ar, C2H4—H2, and C2H4—N2”,J. Vac. Sci. Technol. (1996) 2418-2426.
Ronald M. Kubacki, “Low Temperature Plasma Deposition of Silicon Nitride to Produce Ultra-Reliable, High Performance, Low Cost Sealed Chip-on-Board (SCOB) Assemblies”, IEEE/CPMT Intl Electronics Manufacturing Technology Symposium 1994, pp. 273-280.
Yoshimi et al., “Amorphous Carbon Basis Blue Light Electroluminescent Device”,Optoelectronics Devices and Technologies, Mita Press, vol. 7, Nos. 1 Jun. 1992, pp. 69-81.
International Search Report dated Dec. 20, 2005 for corresponding PCT application, PCT/US2005/020079.

Affiliated with

Also associated with

Rating

Method to improve transmittance of an encapsulating film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to improve transmittance of an encapsulating film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to improve transmittance of an encapsulating film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3791767