Method to improve isolation between EEPROM devices via a field o

Details Method to improve isolation between EEPROM devices via a field o Method to improve isolation between EEPROM devices via a field o

1997-01-15

1998-04-28

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438263, 438530, 438449, H01L 21336

Patent

active

057443912

ABSTRACT:
A process for improving the isolation between devices of an EEPROM cell, has been developed. A high temperature anneal step is performed after an arsenic ion implantation procedure, used to create tunnel transistors for the EEPROM cell. The anneal procedure allows the high concentration of arsenic, implanted into a the top portion of a FOX region during the formation of the tunnel transistors, to be distributed throughout the FOX region, resulting in reduction in the etch rate of the FOX region, during HF containing, pre-clean procedures.

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patent: 5427970 (1995-06-01), Hsue et al.
patent: 5591681 (1997-01-01), Wristers et al.

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