Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-21
2006-03-21
Kennedy, Jennifer (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S258000
Reexamination Certificate
active
07015089
ABSTRACT:
An improved method of patterning resist protective dielectric layer and preferably protective silicon dioxide layer is described. The method consists of two sequential etching steps, the first one being a timed plasma etching process and the second one being a timed wet etching process. Plasma etching is used to remove approximately 70%–90% of the RPO film thickness and wet etching is used to remove the remaining 10%–30% of the film thickness. The two-step etching process achieves superior dimensional control, a non-undercut profile under the resist mask and prevents resist mask peeling from failure of adhesion at the mask/RPO film interface. The improved method has wide applications wherever and whenever RPO film is used in the process flow for fabricating semiconductor devices.
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Hsin Pin-Yi
Hsu Jyh-Shiou
Huang Chuan-Chieh
Kennedy Jennifer
Taiwan Semiconductor Manufacturing Co. Ltd.
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