Method to form a structure to decrease area capacitance...

Details Method to form a structure to decrease area capacitance... Method to form a structure to decrease area capacitance...

2005-03-15

2005-03-15

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S290000, C257S347000, C257S348000

Reexamination Certificate

active

06867104

ABSTRACT:
Method to form a structure to decrease area capacitance within a buried insulator device structure is disclosed. A portion of the substrate layer of a buried insulator structure opposite the insulator layer from the gate is doped with the same doping polarity as the source and drain regions of the device, to provide reduced area capacitance. Such doping may be limited to portions of the substrate which are not below the gate.

REFERENCES:
patent: 5923067 (1999-07-01), Voldman
patent: 6121659 (2000-09-01), Christensen et al.

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