Method to form a semiconductor device having gate dielectric...

Details Method to form a semiconductor device having gate dielectric... Method to form a semiconductor device having gate dielectric...

2011-08-30

2011-08-30

Chambliss, Alonzo (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S275000

Reexamination Certificate

active

08008143

ABSTRACT:
A method for fabricating an integrated circuit device is disclosed. An exemplary method can include providing a substrate having a first region, a second region, and a third region; and forming a first gate structure in the first region, a second gate structure in the second region, and a third gate structure in the third region, wherein the first, second, and third gate structures include a gate dielectric layer, the gate dielectric layer being a first thickness in the first gate structure, a second thickness in the second gate structure, and a third thickness in the third gate structure. Forming the gate dielectric layer of the first, second, and third thicknesses can include forming an etching barrier layer over the gate dielectric layer in at least one of the first, second, or third regions while forming the first, second, and third gate structures, and/or prior to forming the gate dielectric layer in at least one of the first, second, or third regions, performing an implantation process on the at least one region.

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