Method to enhance the initiation of film growth

Details Method to enhance the initiation of film growth Method to enhance the initiation of film growth

2011-04-19

2011-04-19

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S199000, C438S622000

Reexamination Certificate

active

07927933

ABSTRACT:
The present invention relates generally to integrated circuit (IC) fabrication processes. The present invention relates more particularly to the treatment of surfaces, such as silicon dioxide or silicon oxynitride layers, for the subsequent deposition of a metal, metal oxide, metal nitride and/or metal carbide layer. The present invention further relates to a high-k gate obtainable by a method of the invention.

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