Method to enhance resolution of a chemically amplified...

Details Method to enhance resolution of a chemically amplified... Method to enhance resolution of a chemically amplified...

2005-03-01

2005-03-01

Duda, Kathleen (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S330000

Reexamination Certificate

active

06861209

ABSTRACT:
A method to enhance resolution of a chemically amplified photoresist generally includes forming a relief image in the chemically amplified photoresist, wherein the relief image comprises a feature having a first dimension; and contacting the relief image with an aqueous acidic solution for a period of time effective to reduce first dimension of the relief image to a second dimension.

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patent: 5858620 (1999-01-01), Ishibashi et al.
patent: 6274289 (2001-08-01), Subramanian et al.
Ivan Pollentier et al., Sub-50nm gate patterning using line-trimming with 248 or 193nm litho; Microlithography World; May 2002; pp. 4, 6, 8, 25.

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