Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-11-16
2011-10-25
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S424000, C438S514000, C438S518000, C438S522000, C438S526000
Reexamination Certificate
active
08043947
ABSTRACT:
A method for semiconductor processing provides a DSB semiconductor body having a first crystal orientation, a second crystal orientation, and a border region disposed between the first and second crystal orientations. The border region further has a defect associated with an interface of the first crystal orientation and second the second crystal orientation, wherein the defect generally extends a distance into the semiconductor body from a surface of the body. A sacrificial portion of the semiconductor body is removed from the surface thereof, wherein removing the sacrificial portion at least partially removes the defect. The sacrificial portion can be defined by oxidizing the surface at low temperature, wherein the oxidation at least partially consumes the defect. The sacrificial portion can also be removed by CMP. An STI feature may be further formed over the defect after removal of the sacrificial portion, therein consuming any remaining defect.
REFERENCES:
patent: 6069091 (2000-05-01), Chang et al.
patent: 6659846 (2003-12-01), Misra et al.
patent: 2005/0064710 (2005-03-01), Chidambarrao et al.
patent: 2005/0116290 (2005-06-01), de Souza et al.
patent: 2006/0275971 (2006-12-01), Fogel et al.
patent: 2006/0276011 (2006-12-01), Fogel et al.
patent: 2007/0020878 (2007-01-01), Nam
patent: 2007/0128804 (2007-06-01), Jin et al.
patent: 2007/0181977 (2007-08-01), Lochtefeld et al.
“Saenger et al., Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates,” Nov. 23, 2005, Applied Physics Letters, 87, 221911, 1-3.
Pinto Angelo
Ramin Manfred
Xiong Weize
Brady III Wade J.
Franz Warren L.
Garcia Joannie A
Richards N Drew
Telecky , Jr. Frederick J.
LandOfFree
Method to eliminate re-crystallization border defects... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method to eliminate re-crystallization border defects..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to eliminate re-crystallization border defects... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4293639