Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2008-02-28
2011-11-29
Culbert, Roberts (Department: 1716)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C438S710000
Reexamination Certificate
active
08066895
ABSTRACT:
Embodiments of the present invention provide apparatus and method for processing a substrate with increased uniformity. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus comprises a chamber body defining a processing volume, a substrate support disposed in the processing volume, a showerhead disposed in the processing volume opposite to the substrate support, and a plasma generation assembly configured to ignite a plasma from the processing gases in the processing gas in the processing volume. The showerhead is configured to provide one or more processing gases to the processing volume. The showerhead has two or more distribution zones each independently controllable.
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International Search Report and Written Opinion dated Dec. 2, 2008 for International Application No. PCT/US07/68063. (APPM/010536 PCT).
Belen Rodolfo P.
Hammond, IV Edward P.
Hatcher Brian K.
Katz Dan
Paterson Alexander M.
Applied Materials Inc.
Culbert Roberts
Patterson & Sheridan L.L.P.
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