Method of wafer patterning for reducing edge exclusion zone

Details Method of wafer patterning for reducing edge exclusion zone Method of wafer patterning for reducing edge exclusion zone

2006-07-11

2006-07-11

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S107000, C438S113000, C438S633000, C438S926000, C257S629000

Reexamination Certificate

active

07074710

ABSTRACT:
A method includes steps of: (a) providing a wafer on which a film has been deposited; (b) exposing an annular area in an edge exclusion zone of the wafer to radiation having a wavelength suitable for patterning the film in the annular area; and (c) modulating the radiation while exposing the annular area to form a pattern in the film in the annular area.

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