Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-15
2011-03-15
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S795000
Reexamination Certificate
active
07906401
ABSTRACT:
A method of tuning threshold voltages of interdiffusible structures. The method includes a step of situating an interdiffusible structure in a path of a laser and a step of illuminating the interdiffusible structure with laser energy until a desired threshold voltage is obtained.
REFERENCES:
patent: 6156654 (2000-12-01), Ho et al.
Lu Ryan P.
Offord Bruce W.
Ramirez Ayax D.
Russell Stephen D.
Eppele Kyle
Friedl Ryan J.
Le Thao X
The United States of America as represented by the Secretary of
Trice Kimberly
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