Method of stripping photoresist from Al bonding pads that preven

Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...

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134 13, 438720, 438723, 438704, 438725, H01L 21302

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active

060067640

ABSTRACT:
The present invention provides a method of removing photoresist from a wafer surface having a bonding pad using a three step clean composed of (1) a wet cleaning the substrate, (2) a F-containing gas high temperature plasma treatment which prevents the corrosion of aluminum contact pad, and (3) completely striping the photoresist strip using an O.sub.2 dry ash. The invention eliminates metal bonding pad corrosion and the completely removes residual photoresist from keyholes.

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patent: 5378653 (1995-01-01), Yanagida
patent: 5399236 (1995-03-01), Ha et al.
patent: 5451293 (1995-09-01), Tabara
patent: 5468686 (1995-11-01), Kawamoto
patent: 5599743 (1997-02-01), Nakagawa et al.
patent: 5700740 (1997-12-01), Chen et al.

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