Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Removal of imaged layers
Patent
1997-11-18
1999-12-07
Chu, John S.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Removal of imaged layers
430330, 156345, 1566431, 1566461, 20419236, 20419237, 20429831, 20429833, B03F 742, C23C 1500
Patent
active
059981040
ABSTRACT:
A method for removing a used organic resist in a downstream ashing apparatus on a silicon semiconductor wafer in which water vapor is added to an oxygen plasma gas generated by microwaves. The addition of the water vapor lowers an activation energy of the ashing reaction and increases the reactive species generated in the plasma. Accordingly, the ashing rate is increased even at a wafer processing temperature as low as 150.degree. C. The addition of water vapor increases the ashing rate for a wide range of the percentage of water content, such as 5 to 80%, allowing easy control of the process. The lowered operating temperature prevents contamination of the semiconductor wafer. Since CF.sub.4 is not used the SiO.sub.2 layer is protected from being undesirably etched and the semiconductor characteristics do not deteriorate.
REFERENCES:
patent: 3837856 (1974-09-01), Irving et al.
patent: 4292384 (1981-09-01), Staughan et al.
patent: 4512868 (1985-04-01), Fujimura et al.
patent: 4983254 (1991-01-01), Fujimura et al.
patent: 4987284 (1991-01-01), Fujimura et al.
patent: 5057187 (1991-10-01), Shinagawa et al.
Journal of the Electrochemical Society, vol. 129, No. 11, Nov. 1982, "Decapsulation and Photoresist Stripping in Oxygen Microwave Plasmas", Z. Zioba et al., pp. 2537-2541.
Journal of the Electrochemical Society, vol. 124, No. 1, Jan. 1977, "The Reduction of Photoresist Stripping Rates in an Oxygen Plasma By-Product Inhibition and Thermal Mass," J.F. Battey, pp. 147-152.
Extended Abstracts, vol. 83, No. 1, May 1983, "A New High Efficiency, Sub-Megahertz Exitation Frequency, Inductively Coupled Plasma Generator for High Rate Downstream Photo-Resist Stripping and Isotropic Etching", C.B. Zarowin et al. p. 253.
Patent Abstracts of Japan, vol. 10, No. 223 (P-483)(2279), Aug. 5, 1986 and JP-A-61 59338 (Fujitsu Limited), Mar. 26, 1986.
Patent Abstracts of Japan, vol. 10, No. 206 (P-478) (2262) Jul. 18, 1986 & JP-A-61 46751 (Fujitsu Ltd.), Mar. 7, 1986.
Journal of Applied Physics, vol. 51, No. 6, Jun. 1980, "Optical Emission Spectroscopy of Reactive Plasmas: A Method for Correlating Emission Intensities to Reactive Particle Density", Coburn et al., pp. 3134-3136.
J. Electrochem. Soc.: Solid-State Science and Technology, Mar. 1977, vol. 124, No. 3, "The Effects of Geometry on Diffusion-Controlled Chemical Reaction Rates in a Plasma", James F. Battey, pp. 437-441.
J. Electrochem. Soc.: Solid-State Science and Technology, Dec. 1977, vol. 124, No. 12, "The Ultimate By-Products of Stripping Photoresist in an Oxygen Plasma", R.F. Reichelderfer et al., pp. 1926-1927.
Abe Naomichi
Fujimura Shuzo
Shinagawa Keisuke
Chu John S.
Fujitsu Limited
LandOfFree
Method of stripping a resist mask does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of stripping a resist mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of stripping a resist mask will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-822148