Method of smoothing a trench sidewall after a deep trench...

Details Method of smoothing a trench sidewall after a deep trench... Method of smoothing a trench sidewall after a deep trench...

2005-01-25

2005-01-25

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S700000, C438S710000, C216S067000

Reexamination Certificate

active

06846746

ABSTRACT:
Disclosed herein is a method of smoothing a trench sidewall after a deep trench silicon etch process which minimizes sidewall scalloping present after the silicon trench etch. The method comprises exposing the silicon trench sidewall to a plasma generated from a fluorine-containing gas, at a process chamber pressure within the range of about 1 mTorr to about 30 mTorr, for a time period within the range of about 10 seconds to about 600 seconds. A substrate bias voltage within the range of about −10 V to about −40 V is applied during the performance of the post-etch treatment method of the invention.

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Yan Ye et al., “0.35-micron and sub-0.35-micron Metal Stack Etch in a DPS Chamber—DPS Chamber and Process Characterization,” Electrochemical Society Proceedings, 1996, pp. 222-233.

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