Method of selectively applying dopants to an integrated circuit

Details Method of selectively applying dopants to an integrated circuit Method of selectively applying dopants to an integrated circuit

1998-01-14

2000-11-28

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438585, H01L 218238

Patent

active

061534560

ABSTRACT:
An integrated circuit is disclosed that includes a semiconductor substrate, an oxide layer on the substrate, and a polysilicon layer on the oxide layer. The polysilicon layer extends away from the substrate and is doped with elemental boron to increase electrical conductivity thereof. Boron difluoride atoms are implanted in the substrate to define corresponding source and drain regions. Initially, the boron difluoride ions also penetrate a portion of the polysilicon layer. At least a portion of the polysilicon layer is removed to substantially reduce the fluorine-induced migration of boron through the oxide layer to the substrate.

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