Method of removing contaminants

Details Method of removing contaminants Method of removing contaminants

1992-09-03

1994-04-05

McFarlane, Anthony

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 437 13, B44C 122, H01L 21306

Patent

active

053001877

ABSTRACT:
Contaminants are removed from a semiconductor material by heating the semiconductor material to temperature within the range of a minimum temperature where a halogen compound will decompose to halogen atoms without the use of ultraviolet irradiation and react with contaminants present on the semiconductor material and a maximum temperature of 800.degree. C., wherein less than or equal to approximately 50 Angstroms of oxide is formed on the semiconductor material. The ambient in which the semiconductor material is heated is an ambient comprised of a nonreactive gas and a halogen compound for at least a time sufficient to remove a substantial amount of contaminants from the semiconductor material.

REFERENCES:
patent: 3556879 (1971-01-01), Mayer
patent: 4159917 (1979-07-01), Gluck
patent: 4231809 (1980-11-01), Schmidt
patent: 5028560 (1991-07-01), Tsukamoto et al.
patent: 5174881 (1992-12-01), Iwasaki et al.

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