Method of releasing devices from a substrate

Details Method of releasing devices from a substrate Method of releasing devices from a substrate

2005-06-14

2005-06-14

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S011000, C216S079000, C438S719000, C438S733000, C438S739000

Reexamination Certificate

active

06905616

ABSTRACT:
Micro devices are formed in situ in a high density in a substrate comprising a masked silicon layer over a stop layer of a silicon compound, by anisotropically etching the desired feature in the silicon layer, overetching to form a notch at the silicon-stop layer interface, depositing a protective fluorocarbon polymer layer on the sidewalls and bottom of the etched silicon layer, and isotropically etching to separate the etched feature from the stop layer. This method avoids the problems of stiction common in other methods of forming micro devices.

REFERENCES:
patent: 5683591 (1997-11-01), Offenberg
patent: 6238580 (2001-05-01), Cole et al.
patent: 6304367 (2001-10-01), Battilana et al.
patent: 6334761 (2002-01-01), Tai et al.
patent: 6428713 (2002-08-01), Christenson et al.
patent: 6458615 (2002-10-01), Fedder et al.
patent: 6522457 (2003-02-01), Battilana
patent: 6551849 (2003-04-01), Kenney
patent: 6596988 (2003-07-01), Corso et al.
patent: 6627882 (2003-09-01), Schultz et al.
patent: 6633031 (2003-10-01), Schultz et al.
patent: 2003/0071015 (2003-04-01), Chinn et al.
patent: 2003/0124848 (2003-07-01), Chinn et al.
patent: 2004/0077178 (2004-04-01), Yang et al.
Merry et al., “Method for plasma etching a Dielectric Layer,” U.S. Appl. No. 10/655,231, filed Sep. 3, 2003.
Chinn, et al., “Disposable Barrier Technique for Through Wafer Etching in MEMS,” U.S. Appl. No. 10/274,403, filed Oct. 18, 2002.

Affiliated with

Also associated with

Rating

Method of releasing devices from a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of releasing devices from a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of releasing devices from a substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3470416