Method of reducing fringing capacitance in a MOSFET

Details Method of reducing fringing capacitance in a MOSFET Method of reducing fringing capacitance in a MOSFET

2006-11-07

2006-11-07

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000, C257SE21640

Reexamination Certificate

active

07132342

ABSTRACT:
In a method of reducing the fringing capacitance of a MOSFET, the nitride spacers on the sides of the MOSFET gate are etched away to form trenches, which are plugged to define air spacers.

REFERENCES:
patent: 5915182 (1999-06-01), Wu
patent: 6468877 (2002-10-01), Pradeep et al.

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