Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
Inventor
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Bipolar transistor with a box-type germanium profile that...
Low doped base spacer for reduction of emitter-base...
Method of etching a lateral trench under an extrinsic base...
Method of reducing fringing capacitance in a MOSFET
Polysilicon-edge, base-emitter super self-aligned,...
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Profile ID: LFUS-PAI-P-2329873