Method of recovering valuable material from exhaust gas...

Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...

Reexamination Certificate

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C134S022100, C438S905000

Reexamination Certificate

active

07833358

ABSTRACT:
A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.

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