Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Reexamination Certificate
2006-04-07
2010-11-16
Cleveland, Michael (Department: 1712)
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
C134S022100, C438S905000
Reexamination Certificate
active
07833358
ABSTRACT:
A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.
REFERENCES:
patent: 5372849 (1994-12-01), McCormick et al.
patent: 5962716 (1999-10-01), Uhlenbrock et al.
patent: 6063705 (2000-05-01), Vaartstra
patent: 6114557 (2000-09-01), Uhlenbrock et al.
patent: 6338991 (2002-01-01), Zhang et al.
patent: 6358573 (2002-03-01), Raoux et al.
patent: 6365502 (2002-04-01), Paranjpe et al.
patent: 6423619 (2002-07-01), Grant et al.
patent: 6440495 (2002-08-01), Wade et al.
patent: 6458183 (2002-10-01), Phillips et al.
patent: 6462367 (2002-10-01), Marsh et al.
patent: 6479100 (2002-11-01), Jin et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6506352 (2003-01-01), Lindfors et al.
patent: 6517616 (2003-02-01), Marsh et al.
patent: 6527855 (2003-03-01), Delarosa et al.
patent: 6531030 (2003-03-01), Nakajima
patent: 6536602 (2003-03-01), Kopetzky et al.
patent: 6537461 (2003-03-01), Nakahara et al.
patent: 6541067 (2003-04-01), Marsh et al.
patent: 6576778 (2003-06-01), Uhlenbrock et al.
patent: 6580111 (2003-06-01), Kim et al.
patent: 6605735 (2003-08-01), Kawano et al.
patent: 6610568 (2003-08-01), Marsh et al.
patent: 6617634 (2003-09-01), Marsh et al.
patent: 6627995 (2003-09-01), Paranipe et al.
patent: 6713373 (2004-03-01), Omstead
patent: 6737317 (2004-05-01), Marsh et al.
patent: 6743739 (2004-06-01), Shimamoto et al.
patent: 6744138 (2004-06-01), Marsh
patent: 6780758 (2004-08-01), Derderian et al.
patent: 6790773 (2004-09-01), Drewery et al.
patent: 6800542 (2004-10-01), Kim
patent: 6800937 (2004-10-01), Marsh et al.
patent: 6887795 (2005-05-01), Soininen et al.
patent: 2001/0006838 (2001-07-01), Won et al.
patent: 2001/0054730 (2001-12-01), Kim et al.
patent: 2002/0000587 (2002-01-01), Kim et al.
patent: 2002/0004293 (2002-01-01), Soininen et al.
patent: 2002/0025627 (2002-02-01), Marsh et al.
patent: 2002/0028556 (2002-03-01), Marsh et al.
patent: 2002/0074577 (2002-06-01), Marsh et al.
patent: 2002/0076881 (2002-06-01), Marsh et al.
patent: 2002/0081381 (2002-06-01), Delarosa et al.
patent: 2002/0102810 (2002-08-01), Iizuka et al.
patent: 2002/0121697 (2002-09-01), Marsh
patent: 2002/0125516 (2002-09-01), Marsh et al.
patent: 2002/0173054 (2002-11-01), Kim
patent: 2003/0032207 (2003-02-01), Rengarajan et al.
patent: 2003/0037802 (2003-02-01), Nakahara et al.
patent: 2003/0096468 (2003-05-01), Soininen et al.
patent: 2003/0165615 (2003-09-01), Aaltonen et al.
patent: 2003/0212285 (2003-11-01), Uhlenbrock et al.
patent: 2004/0005753 (2004-01-01), Kostamo et al.
patent: 2004/0038529 (2004-02-01), Soininen et al.
patent: 2004/0105934 (2004-06-01), Chang et al.
patent: 2004/0107897 (2004-06-01), Lee et al.
patent: 2004/0149384 (2004-08-01), Kanno et al.
patent: 2004/0241321 (2004-12-01), Ganguli et al.
patent: 2005/0006799 (2005-01-01), Gregg et al.
patent: 2005/0067098 (2005-03-01), Hughes et al.
patent: 2005/0081882 (2005-04-01), Greer et al.
patent: 2005/0238808 (2005-10-01), Gatineau et al.
patent: 1 293 509 (2004-05-01), None
patent: 1475825 (2004-11-01), None
patent: 2001-111000 (2001-04-01), None
patent: 2001-237400 (2001-08-01), None
patent: WO 01/88972 (2001-11-01), None
patent: WO 03/056612 (2003-07-01), None
patent: WO 2005/020317 (2005-03-01), None
Aaltonen, et al. “Atomic Layer Deposition of Ruthenium from RuCp2and Oxygen: Film Growth and Reaction Mechanism Studies,” Electrochemical Society Proceedings vol. 2003-08 pp. 946-953.
Aaltonen, et al. “Atomic Layer Deposition of Ruthenium Thin Films from Ru(thd)3and Oxygen,” Chem. Vap. Deposition (2004), 10, No. 4 pp. 215-219.
Aaltonen, et al., “Ruthenium Thin Films Grown by Atomic Layer Deposition,” Chem. Vap. Deposition (2003), 9, No. 1 pp. 45-49.
Aoyama, et al. “Ruthenium Films Prepared by Liquid Source Chemical Vapor Deposition Using Bis-(ethylcyclopentadienyl)ruthenium,” Jpn. J. Appl. Phys. vol. 38 (1999) pp. L1134-L1136.
Dadgar, et al. “Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition,” Journal of Crystal Growth 195 (1998) pp. 69-73.
Goswami, et al. Transition Metals Show Promise as Copper Barriers, Semiconductor International, ATMI, San Jose—May 1, 2004.
Kwon, et al. “Atomic Layer Deposition of Ruthenium Thin Films for Copper Glue Layer,” Journal of the Electrochemical Society, 151 (2) (2004) pp. G109-G112.
Kwon, et al. “Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films,” Electrochemical and Solid-State Letters, 7 (4) (2004) pp. C46-C48.
Lashdaf, et al. “Deposition of palladium and ruthenium β-diketonates on alumina and silica supports in gas and liquid phase,” Applied Catalysis A: General 241 (2003) pp. 51-63.
Lim, et al. “Atomic layer deposition of transition metals,” Nature Materials, vol. 2 Nov. (2003) pp. 749-754.
Meda, et al. “Chemical Vapor Deposition of Ruthenium Dioxide Thin Films From Bis(2, 4-dimethylpentadienyl) Ruthenium,” Chemical Aspects of Electronic Ceramics Processing, Symposium Mater. Res. Soc., Warrendale, PA, USA, 1998, pp. 75-80, XP009050315, ISBN: 1-55899-400-9.
Nakahara, et al. “Etching Technique for Ruthenium with a High Etch Rate and High Selectivity Using Ozone Gas,” J. Vac. Sci.Technol. B 19(6), Nov./Dec. 2001, pp. 2133-2136.
Shibutami, et al. “A Novel Ruthenium Precursor for MOCVD without Seed Ruthenium Layer,” TOSOH Research & Technology Review, vol. 47 (2003) pp. 61-64.
Chu Schubert S.
Ganguli Seshadri
Ma Paul
Marcadal Christophe
Shah Kavita
Applied Materials Inc.
Blan Nicole
Cleveland Michael
Patterson & Sheridan LLP
LandOfFree
Method of recovering valuable material from exhaust gas... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of recovering valuable material from exhaust gas..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of recovering valuable material from exhaust gas... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4239389