Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2007-10-30
2009-08-18
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S185030, C365S185180
Reexamination Certificate
active
07577042
ABSTRACT:
Provided in one example embodiment, a method of programming n bits of data to a semiconductor memory device may include outputting a first bit of data written in a memory cell from a first latch, storing the first bit of the data to a third latch, storing a second bit of the data to the first latch, outputting the second bit of the data from the first latch, storing the second bit of the data to the second latch, and writing the second bit of the data stored in the second latch to the memory cell with reference to a data storage state of the first bit of the data stored in the third latch.
REFERENCES:
patent: 7254064 (2007-08-01), Kim et al.
Byun Sung-jae
Cho Kyoung-lae
Hyun Jae-woong
Lee Choong-ho
Park Kyu-charn
Harness & Dickey & Pierce P.L.C.
Hoang Huan
Samsung Electronics Co,. Ltd.
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