Method of producing complementary SiGe bipolar transistors

Details Method of producing complementary SiGe bipolar transistors Method of producing complementary SiGe bipolar transistors

2007-03-20

2007-03-20

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S317000, C438S325000, C438S340000, C438S341000, C438S342000

Reexamination Certificate

active

10928655

ABSTRACT:
Method of producing complementary SiGe bipolar transistors. In a method of producing complementary SiGe bipolar transistors, interface oxide layers (38, 58) for NPN and PNP emitters (44, 64), are separately formed and emitter polysilicon (40, 60) is separately patterned, allowing these layers to be optimized for the respective conductivity type.

REFERENCES:
patent: 5930635 (1999-07-01), Bashir et al.
patent: 6856000 (2005-02-01), Trogolo et al.
patent: 2003/0119270 (2003-06-01), Chen et al.
patent: 2003/0132453 (2003-07-01), Greenberg et al.
patent: 01196868 (1989-08-01), None

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