Method of producing annealed wafer and annealed wafer

Details Method of producing annealed wafer and annealed wafer Method of producing annealed wafer and annealed wafer

2006-12-26

2006-12-26

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S773000, C257SE21240, C257SE21280

Reexamination Certificate

active

07153785

ABSTRACT:
The present invention provides method of producing an annealed wafer wherein a silicon single crystal wafer produced by the Czochralski (CZ) method is subjected to a high temperature annealing in an atmosphere of an argon gas, a hydrogen gas, or a mixture gas thereof at a temperature of 1100–1350° C. for 10–600 minutes, during the annealing the silicon single crystal wafer is supported by a supporting jig only in a central side region of the wafer except for 5 mm or more from a peripheral end of the wafer, and before performing the high temperature annealing, a pre-annealing is performed at a temperature less than the temperature of the high temperature annealing to grow oxide precipitates. Thereby, there is provided a method of producing an annealed wafer wherein slip dislocations generated in a high temperature annealing can be suppressed even in the case of a silicon single crystal wafer having a large diameter of 300 mm or more, and provided the annealed wafer.

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