Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1980-08-11

1982-02-16

Newsome, John H.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

427 89, 427 90, 427 90, 427 91, 427 96, 427 99, 430312, 430316, 156643, B05D 306

Patent

active

043159842

ABSTRACT:
That region of a resist film in which a contact is to be formed and that region thereof in which an interconnection is to be formed are respectively irradiated with an electron beam in a dose substantially equal to an optimum dose of the resist film and in a dose less than the optimum dose. Thereafter, the resist film is developed.
By performing dry etching, an opening extending to a substrate is provided in the region in which the contact is to be formed, and the surface of an insulating film overlying the substrate is exposed in the region in which the interconnection is to be formed.
After depositing a conductive metal film on the whole surface the remaining resist film is removed together with the metal film deposited thereon, whereby the contact and the interconnection are formed.

REFERENCES:
patent: 3649393 (1972-03-01), Hatzakis
patent: 3930857 (1976-01-01), Benoz et al.
patent: 4001061 (1977-01-01), Ahn et al.
patent: 4035522 (1977-07-01), Hatzakis
patent: 4040891 (1977-08-01), Chang et al.

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