Method of producing a metal oxide semiconductor device with rais

Details Method of producing a metal oxide semiconductor device with rais Method of producing a metal oxide semiconductor device with rais

1998-05-26

2000-07-04

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438300, 438301, 438303, 438564, 438626, 438692, H01L 21336

Patent

active

060837985

ABSTRACT:
A semiconductor device and a method of making the device with a raised source/drain has a semiconductive material that is non-selectively deposited in a layer over the device area. The semiconductive material is then etched to form spacers that will form the raised soure/drain areas following doping of the spacers. The gate of the semiconductor device is protected during the etching by an etch stop layer that is grown or deposited over the structure to be protected, e.g., the gate, prior to the deposition of the semiconductive material layer. Lightly doped drain ion implantation is performed prior to the formation of the spacers, and source-drain ion implantation is performed preferably after the formation of the spacers, to create the shallow junctions.

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