Method of producing a heat dissipation substrate of...

Powder metallurgy processes – Powder metallurgy processes with heating or sintering – Powder shape or size characteristics

Reexamination Certificate

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Details

C419S008000, C419S028000, C419S042000, C148S679000, C148S684000, C361S704000, C228S262600, C029S017300, C029S530000

Reexamination Certificate

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07083759

ABSTRACT:
A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a composite of molybdenum and copper and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10−6/K at 30–800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).

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