Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-11-07
2010-11-09
Vu, Hung (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S954000, C438S958000
Reexamination Certificate
active
07829450
ABSTRACT:
In a method of processing a contact pad, a passivation layer stack including at least one passivation layer is formed on at least an upper surface of a contact pad region. A first portion of the passivation layer stack is removed from above the contact pad region, wherein a second portion of the passivation layer remains on the contact pad region and covers the contact pad region. An adhesion layer is formed on the passivation layer stack. The adhesion layer is patterned, wherein the adhesion layer is removed from above the contact pad region. Furthermore, the second portion of the passivation layer stack is removed.
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Goellner Reinhard
Groteloh Doerthe
Hammer Markus
Melzl Michael
Ruhl Guenther
Infineon - Technologies AG
Slater & Matsil L.L.P.
Vu Hung
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